Invention Grant
US08934283B2 Semiconductor memory device, semiconductor device and method of manufacturing semiconductor memory device
有权
半导体存储器件，半导体器件和半导体存储器件的制造方法
- Patent Title: Semiconductor memory device, semiconductor device and method of manufacturing semiconductor memory device
- Patent Title (中): 半导体存储器件，半导体器件和半导体存储器件的制造方法
-
Application No.: US13553764Application Date: 2012-07-19
-
Publication No.: US08934283B2Publication Date: 2015-01-13
- Inventor: Masaharu Matsudaira , Masayuki Terai
- Applicant: Masaharu Matsudaira , Masayuki Terai
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2011-209021 20110926
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/108 ; H01L45/00 ; H01L27/24 ; H01L49/02 ; H01L27/105
Abstract:
In a case where a DRAM and a ReRAM are mounted together, a manufacturing cost thereof is reduced while maintaining performance of a capacitance element and a variable resistance element. A semiconductor memory device includes a variable resistance element and a capacitance element. The variable resistance element has a cylinder type MIM structure with a first depth, and is designed for a variable resistance type memory. The capacitance element has a cylinder type MIM structure with a second depth deeper than the first depth, and is designed for a DRAM.
Public/Granted literature
- US08902630B2 Semiconductor memory device, semiconductor device and method of manufacturing semiconductor memory device Public/Granted day:2014-12-02
Information query
