Magnetic memory devices are provided, the devices include at least memory cell and a reference cell on a substrate. The memory cells include a first base magnetic layer, a free layer, and a first tunnel barrier layer between the first base magnetic layer and free layer. The reference memory cell includes a second base magnetic layer, a reference magnetic layer, and a second tunnel barrier layer between the second base magnetic layer and reference magnetic layer. The reference magnetic layer has a magnetic direction substantially perpendicular to that of the free layer.