Invention Grant
- Patent Title: Magnetoresistance effect device and method of production of the same
- Patent Title (中): 磁阻效应器及其制作方法相同
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Application No.: US14032815Application Date: 2013-09-20
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Publication No.: US08934290B2Publication Date: 2015-01-13
- Inventor: David D. Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
- Applicant: Canon Anelva Corporation , National Institute of Advanced Industrial Science and Technology
- Applicant Address: JP Kanagawa JP Ibaraki
- Assignee: Canon Anelva Corporation,National Institute of Advanced Industrial Science Nad Technology
- Current Assignee: Canon Anelva Corporation,National Institute of Advanced Industrial Science Nad Technology
- Current Assignee Address: JP Kanagawa JP Ibaraki
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2004-259280 20040907
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L43/12 ; B82Y25/00 ; B82Y40/00 ; C23C14/08 ; C23C14/34 ; G11C11/16 ; H01F10/32 ; H01F41/30 ; H01L43/08 ; H01F41/18
Abstract:
A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
Public/Granted literature
- US20140024140A1 MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME Public/Granted day:2014-01-23
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