Invention Grant
- Patent Title: Memory controller for multi-level memory device and error correcting method
- Patent Title (中): 多级存储器的存储控制器和纠错方法
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Application No.: US13597447Application Date: 2012-08-29
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Publication No.: US08934301B2Publication Date: 2015-01-13
- Inventor: Eun-Jin Yun
- Applicant: Eun-Jin Yun
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0000589 20120103
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
An error correcting method of a memory controller which controls a nonvolatile memory device includes judging whether first read data read from the nonvolatile memory device is correctable; reading second read data from the nonvolatile memory device when the first read data is uncorrectable; and correcting an error of the first read data based on error information of the second read data and error information of the first read data.
Public/Granted literature
- US20130170296A1 MEMORY CONTROLLER FOR MULTI-LEVEL MEMORY DEVICE AND ERROR CORRECTING METHOD Public/Granted day:2013-07-04
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