Invention Grant
US08934302B2 Nonvolatile memory having stacked structure and related method of operation
有权
具有层叠结构和相关操作方法的非易失性存储器
- Patent Title: Nonvolatile memory having stacked structure and related method of operation
- Patent Title (中): 具有层叠结构和相关操作方法的非易失性存储器
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Application No.: US13600327Application Date: 2012-08-31
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Publication No.: US08934302B2Publication Date: 2015-01-13
- Inventor: Dong-Hun Kwak
- Applicant: Dong-Hun Kwak
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0112401 20111031
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C7/00 ; H01L27/115
Abstract:
A method is provided for operating a nonvolatile memory comprising memory cells stacked on a substrate. The method comprises counting a number of program loops performed in a first program operation of selected memory cells connected to a selected wordline, and controlling an increment of a program voltage between successive program loops of a second program operation of the selected memory cells according to the counted number.
Public/Granted literature
- US20130107653A1 NONVOLATILE MEMORY HAVING STACKED STRUCTURE AND RELATED METHOD OF OPERATION Public/Granted day:2013-05-02
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