Invention Grant
US08934304B2 Operating method of nonvolatile memory device and operating method of memory system including nonvolatile memory device
有权
非易失性存储器件的操作方法和包括非易失性存储器件的存储器系统的操作方法
- Patent Title: Operating method of nonvolatile memory device and operating method of memory system including nonvolatile memory device
- Patent Title (中): 非易失性存储器件的操作方法和包括非易失性存储器件的存储器系统的操作方法
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Application No.: US13471485Application Date: 2012-05-15
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Publication No.: US08934304B2Publication Date: 2015-01-13
- Inventor: Hyunsoo Cho , Kyoungil Bang
- Applicant: Hyunsoo Cho , Kyoungil Bang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0045877 20110516
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C16/10 ; G11C16/34
Abstract:
A nonvolatile memory device includes a plurality of memory cells and a plurality of monitor cells. The method of operating the device includes erasing the plurality of memory cells and the plurality of monitor cells, programming at least one first memory cell among the plurality of memory cells to a first program state, programming at least one first monitor cell among the plurality of monitor cells to the first program state, and refreshing data stored in the plurality of memory cells according to a result read from the at least one first monitor cell during a read operation of the at least one first monitor cell.
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