Invention Grant
- Patent Title: Semiconductor memory device capable of screening a weak bit and repairing the same
- Patent Title (中): 半导体存储器能够筛选弱点并进行修复
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Application No.: US13604308Application Date: 2012-09-05
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Publication No.: US08934311B2Publication Date: 2015-01-13
- Inventor: Hak-soo Yu , Uk-song Kang , Chul-woo Park , Joo-sun Choi , Hong-Sun Hwang
- Applicant: Hak-soo Yu , Uk-song Kang , Chul-woo Park , Joo-sun Choi , Hong-Sun Hwang
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0049775 20120510
- Main IPC: G11C29/44
- IPC: G11C29/44 ; G11C29/50 ; G11C29/00 ; G11C29/04 ; G11C11/41
Abstract:
A semiconductor device includes a first memory region including a plurality of memory cells; a test unit configured to test the first memory region, and detect a weak bit from among the plurality of memory cells; and a second memory region configured to store a weak bit address (WBA) of the first memory region, and data intended to be stored in the weak bit, wherein the first memory region and the second memory region include different types of memory cells.
Public/Granted literature
- US20130058145A1 MEMORY SYSTEM Public/Granted day:2013-03-07
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