Invention Grant
- Patent Title: Edge-emitting etched-facet lasers
- Patent Title (中): 边缘发射蚀刻面激光器
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Application No.: US13690792Application Date: 2012-11-30
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Publication No.: US08934512B2Publication Date: 2015-01-13
- Inventor: Alex A. Behfar , Malcolm R. Green , Cristian Stagarescu
- Applicant: BinOptics Corporation
- Applicant Address: US NY Ithaca
- Assignee: BinOptics Corporation
- Current Assignee: BinOptics Corporation
- Current Assignee Address: US NY Ithaca
- Agency: Wilmer Cutler Pickering Hale and Dorr LLP
- Main IPC: H01S5/026
- IPC: H01S5/026 ; H01S5/20 ; H01S5/00 ; H01S5/02 ; H01S5/22 ; H01S5/028

Abstract:
A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in said epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
Public/Granted literature
- US20130156059A1 EDGE-EMITTING ETCHED-FACET LASERS Public/Granted day:2013-06-20
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