Invention Grant
- Patent Title: Semiconductor light emitting device and manufacturing method therefor
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Application No.: US13010154Application Date: 2011-01-20
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Publication No.: US08934513B2Publication Date: 2015-01-13
- Inventor: Yukio Shakuda
- Applicant: Yukio Shakuda
- Applicant Address: JP Kyoto-Shi
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP6-219892 19940914; JP6-233179 19940928; JP6-233180 19940928; JP6-235013 19940929; JP6-235014 19940929
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/323 ; H01L33/00 ; H01L33/32 ; H01S5/223 ; H01S5/32 ; H01L33/12 ; H01S5/02 ; H01S5/042 ; H01S5/20 ; H01S5/22
Abstract:
A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.
Public/Granted literature
- US20110176571A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2011-07-21
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