Invention Grant
- Patent Title: Memory apparatus
- Patent Title (中): 存储设备
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Application No.: US13547346Application Date: 2012-07-12
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Publication No.: US08935460B2Publication Date: 2015-01-13
- Inventor: Young-ho Park , Seong-jun Ahn , Min-cheol Kwon
- Applicant: Young-ho Park , Seong-jun Ahn , Min-cheol Kwon
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2011-0071547 20110719
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F12/02 ; G11C29/00

Abstract:
A memory apparatus includes first memory chip and second memory chip; and a control unit configured to manage a global reserved area, a first virtual area for the first memory chip, and a second virtual area for the second memory chip, wherein the first virtual area includes a first user area and a first reserved area, the second virtual area includes a second user area and a second reserved area, the global reserved area includes a first plurality of reserved blocks corresponding to the first reserved area and a second plurality of reserved blocks corresponding to the second reserved area, and the control unit is configured to assign a second virtual block included in the global reserved area to the first user area if the control unit detects a first virtual block included in the first user area is a bad block.
Public/Granted literature
- US20130024607A1 MEMORY APPARATUS Public/Granted day:2013-01-24
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