Invention Grant
- Patent Title: Sputtering target with low generation of particles
- Patent Title (中): 溅射靶与低产生的颗粒
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Application No.: US12935014Application Date: 2009-03-27
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Publication No.: US08936706B2Publication Date: 2015-01-20
- Inventor: Kei Koide
- Applicant: Kei Koide
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2008-096806 20080403
- International Application: PCT/JP2009/056299 WO 20090327
- International Announcement: WO2009/123055 WO 20091008
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/06

Abstract:
Provided is a sputtering target with low generation of particles having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, wherein a center-line average surface roughness Ra is 0.1 μm or less, a ten-point average roughness Rz is 0.4 μm or less, a distance between local peaks (roughness motif) AR is 120 μm or less, and an average length of waviness motif AW is 1500 μm or more. Provided are a sputtering target wherein the generation of nodules and particles upon sputtering can be prevented or inhibited by improving the target surface, which contains large amounts of substances without ductility; and a surface processing method thereof.
Public/Granted literature
- US20110048935A1 Sputtering Target with Low Generation of Particles Public/Granted day:2011-03-03
Information query
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