Invention Grant
- Patent Title: Light emitting structure having electrodes and manufacturing method thereof
- Patent Title (中): 具有电极的发光结构及其制造方法
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Application No.: US13227841Application Date: 2011-09-08
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Publication No.: US08936970B2Publication Date: 2015-01-20
- Inventor: Chia-Liang Hsu
- Applicant: Chia-Liang Hsu
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong & Steiner, P.C.
- Priority: TW99130428A 20100908
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/50 ; H01L33/62 ; H01L33/60 ; H01L33/00 ; H01L33/48 ; H01L33/54
Abstract:
A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.
Public/Granted literature
- US20120056229A1 LIGHT EMITTING STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-03-08
Information query
IPC分类:
