Invention Grant
US08936984B2 3-D nonvolatile memory device and method of manufacturing the same
有权
3-D非易失性存储器件及其制造方法
- Patent Title: 3-D nonvolatile memory device and method of manufacturing the same
- Patent Title (中): 3-D非易失性存储器件及其制造方法
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Application No.: US13598579Application Date: 2012-08-29
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Publication No.: US08936984B2Publication Date: 2015-01-20
- Inventor: Joo Hee Han
- Applicant: Joo Hee Han
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0139988 20111222
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A three-dimensional (3-D) nonvolatile memory device includes channel layers protruding perpendicular to a surface of a substrate, interlayer insulating layers and conductive layer patterns alternately formed to surround each of the channel layers, a slit formed between the channel layers, the slit penetrating the interlayer insulating layers and the conductive layer patterns, and an etch-stop layer formed on the surface of the substrate at the bottom of the slit.
Public/Granted literature
- US20130161818A1 3-D NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-06-27
Information query
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