Method of semiconductor integrated circuit fabrication

Invention Grant

US08937006B2 Method of semiconductor integrated circuit fabrication 有权

Title translation: 半导体集成电路制造方法

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Patent Title: Method of semiconductor integrated circuit fabrication
Patent Title (中): 半导体集成电路制造方法
Application No.: US13561263

Application Date: 2012-07-30
Publication No.: US08937006B2

Publication Date: 2015-01-20
Inventor: Minchang Liang , Chie-Iuan Lin , Yao-Kwang Wu
Applicant: Minchang Liang , Chie-Iuan Lin , Yao-Kwang Wu
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Haynes and Boone, LLP
Main IPC: H01L21/3205
IPC: H01L21/3205

Method of semiconductor integrated circuit fabrication

Abstract:

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device. The method also includes forming a step-forming-hard-mask (SFHM) on the MG stack in a predetermined area on the semiconductor substrate, performing MG recessing, depositing a MG hard mask over the semiconductor substrate and recessing the MG hard mask to fully remove the MG hard mask from the MG stack in the predetermined area.

Abstract(Chinese):

公开了制造半导体集成电路（IC）的方法。该方法包括接收半导体器件。该方法还包括在半导体衬底上的预定区域中的MG堆叠上形成阶梯形成 - 硬掩模（SFHM），执行MG凹陷，在半导体衬底上沉积MG硬掩模并使MG硬掩模完全凹陷从预定区域的MG堆叠中取出MG硬掩模。

Public/Granted literature

US20140030880A1 Method of Semiconductor Integrated Circuit Fabrication Public/Granted day:2014-01-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）