Invention Grant
- Patent Title: Compound barrier layer, method for forming the same and package structure using the same
- Patent Title (中): 复合阻挡层，其形成方法和使用其的封装结构
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Application No.: US13728544Application Date: 2012-12-27
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Publication No.: US08937394B2Publication Date: 2015-01-20
- Inventor: Chun-Ting Chen , Li-Wen Lai , Kun-Wei Lin , Teng-Yen Wang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW101130751A 20120824
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L23/31 ; H01L21/56 ; H01L51/00 ; H01L51/52
Abstract:
An embodiment of the invention provides a compound barrier layer, including: a first barrier layer disposed on a substrate; and a second barrier layer disposed on the first barrier layer, wherein the first barrier layer and second barrier layer both include a plurality of alternately arranged inorganic material regions and organo-silicon material regions and the inorganic material regions and the organo-silicon material regions of the first barrier layer and second barrier layer are alternatively stacked vertically.
Public/Granted literature
- US20140054803A1 COMPOUND BARRIER LAYER, METHOD FOR FORMING THE SAME AND PACKAGE STRUCTURE USING THE SAME Public/Granted day:2014-02-27
Information query
IPC分类:
