Invention Grant
- Patent Title: Method for testing through-silicon-via
- Patent Title (中): 硅通孔测试方法
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Application No.: US13939408Application Date: 2013-07-11
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Publication No.: US08937486B2Publication Date: 2015-01-20
- Inventor: Cheng-Wen Wu , Po-Yuan Chen , Ding-Ming Kwai , Yung-Fa Chou
- Applicant: National Tsing Hua University
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Jackson IPG PLLC
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R31/28 ; H01L21/66 ; H01L21/768
Abstract:
A method for testing a TSV comprises charging a through-silicon-via under test to a first predetermined voltage level charging a capacitance device to a second predetermined voltage level; performing charge-sharing between the through-silicon-via and the capacitance device; and determining that the through-silicon-via under test is not faulty if the voltage level of the through-silicon-via after the charge-sharing step is within a predetermined range.
Public/Granted literature
- US20130293255A1 METHOD FOR TESTING THROUGH-SILICON-VIA Public/Granted day:2013-11-07
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