Invention Grant
- Patent Title: Method of maintaining the state of semiconductor memory having electrically floating body transistor
- Patent Title (中): 维持具有电浮体晶体管的半导体存储器的状态的方法
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Application No.: US13941475Application Date: 2013-07-13
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Publication No.: US08937834B2Publication Date: 2015-01-20
- Inventor: Yuniarto Widjaja , Zvi Or-Bach
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Cupertino
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Law Office of Alan W. Cannon
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C7/00 ; G11C11/404 ; H01L27/108 ; H01L29/66 ; H01L29/78 ; H01L29/788 ; G11C11/56 ; G11C16/04
Abstract:
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.
Public/Granted literature
- US20140160868A1 Method of Maintaining the State of Semiconductor Memory Having Electrically Floating Body Transistor Public/Granted day:2014-06-12
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