Invention Grant
US08937838B2 Finding optimal read thresholds and related voltages for solid state memory
有权
找到固态存储器的最佳读取阈值和相关电压
- Patent Title: Finding optimal read thresholds and related voltages for solid state memory
- Patent Title (中): 找到固态存储器的最佳读取阈值和相关电压
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Application No.: US13691113Application Date: 2012-11-30
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Publication No.: US08937838B2Publication Date: 2015-01-20
- Inventor: Xiangyu Tang , Lingqi Zeng , Jason Bellorado , Frederick K. H. Lee , Arunkumar Subramanian
- Applicant: SK hynix memory solutions inc.
- Applicant Address: US CA San Jose
- Assignee: SK hynix memory solutions inc.
- Current Assignee: SK hynix memory solutions inc.
- Current Assignee Address: US CA San Jose
- Agency: Van Pelt, Yi & James LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/26
Abstract:
An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value associated with stored values. Two points having ratios closest to the expected value are selected from the set. A voltage is determined based at least in part on the selected two points and the expected value.
Public/Granted literature
- US20130176775A1 FINDING OPTIMAL READ THRESHOLDS AND RELATED VOLTAGES FOR SOLID STATE MEMORY Public/Granted day:2013-07-11
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