Invention Grant
- Patent Title: Memory device redundancy management system
- Patent Title (中): 内存设备冗余管理系统
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Application No.: US13665917Application Date: 2012-10-31
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Publication No.: US08937845B2Publication Date: 2015-01-20
- Inventor: Chetan Verma , Piyush Kumar Mishra , Ashish Sharma
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Main IPC: G11C29/04
- IPC: G11C29/04 ; G11C29/12 ; G11C29/24 ; G11C11/4193

Abstract:
A system for managing redundancy in a memory device includes memory arrays and associated periphery logic circuits, and redundant memory arrays and associated redundant periphery logic circuits. The memory arrays and a first set of logic circuits associated with the periphery logic circuits corresponding to the memory arrays are connected to the power supply by way of memory I/O switches. The redundant memory arrays and associated redundant periphery logic circuits are connected to the power supply by way of redundant I/O switches. The memory and redundant I/O switches are switched on/off based on an acknowledgement signal generated during a built-in-self-test (BIST) operation of the memory device.
Public/Granted literature
- US20140119131A1 MEMORY DEVICE REDUNDANCY MANAGEMENT SYSTEM Public/Granted day:2014-05-01
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