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US08938142B2 Silicon-based opto-electronic integrated circuit with reduced polarization dependent loss 有权
硅基光电集成电路具有降低的偏振相关损耗

Silicon-based opto-electronic integrated circuit with reduced polarization dependent loss
Abstract:
A silicon-based opto-electronic circuit is formed to exhibit reduced polarization-dependent loss by strategically placing the photodetecting device as close as possible to the entry point of the optical signal into the opto-electronic circuit arrangement. While the incoming optical signal will include both TE and TM modes, by minimizing the length of the optical waveguide path along which the signal must propagate before reaching a photodetector, the attenuation associated with TM mode signal will be negligible.
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