Invention Grant
- Patent Title: Silicon carbide semiconductor device and method of manufacturing the same
- Patent Title (中): 碳化硅半导体器件及其制造方法
-
Application No.: US13855072Application Date: 2013-04-02
-
Publication No.: US08941122B2Publication Date: 2015-01-27
- Inventor: Jun Kawai , Norihito Tokura , Kazuhiko Sugiura
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2012-84901 20120403
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/16 ; H01L21/22 ; H01L21/04 ; H01L29/78 ; H01L29/66
Abstract:
In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light.
Public/Granted literature
- US20130285070A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-10-31
Information query
IPC分类:
