Invention Grant
- Patent Title: Systems and methods for dry etching a photodetector array
- Patent Title (中): 用于干蚀刻光电检测器阵列的系统和方法
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Application No.: US13919541Application Date: 2013-06-17
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Publication No.: US08941145B2Publication Date: 2015-01-27
- Inventor: Pierre-Yves Delaunay
- Applicant: The Boeing Company
- Applicant Address: US IL Chicago
- Assignee: The Boeing Company
- Current Assignee: The Boeing Company
- Current Assignee Address: US IL Chicago
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/18
- IPC: H01L21/18 ; H01L21/301 ; H01L21/302 ; H01L21/3065 ; H01L31/0304 ; H01L31/0352 ; H01L27/146 ; H01L21/66
Abstract:
Systems and methods for dry eteching a photodetector array based on InAsSb are provided. A method for fabricating an array of photodetectors includes receiving a pattern of an array of photodetectors formed from InAsSb, the pattern including at least one trench defined between adjacent photodetectors, and dry etching the at least one trench with a plasma including BrCl3 and Ar.
Public/Granted literature
- US20140367822A1 SYSTEMS AND METHODS FOR DRY ETCHING A PHOTODETECTOR ARRAY Public/Granted day:2014-12-18
Information query
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