Invention Grant
- Patent Title: Transistor formation using cold welding
- Patent Title (中): 晶体管形成采用冷焊
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Application No.: US13660497Application Date: 2012-10-25
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Publication No.: US08941147B2Publication Date: 2015-01-27
- Inventor: Cheng-Wei Cheng , Shu-Jen Han , Masaharu Kobayashi , Ko-Tao Lee , Devendra K. Sadana , Kuen-Ting Shiu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is joined to the second metal layer using a cold welding process wherein one of the first substrate and the second substrate includes a semiconductor channel layer for forming a transistor device.
Public/Granted literature
- US20140091370A1 TRANSISTOR FORMATION USING COLD WELDING Public/Granted day:2014-04-03
Information query
IPC分类:
