Invention Grant
- Patent Title: Fin field effect transistors including multiple lattice constants and methods of fabricating the same
- Patent Title (中): 包括多个晶格常数的Fin场效应晶体管及其制造方法
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Application No.: US13615968Application Date: 2012-09-14
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Publication No.: US08941155B2Publication Date: 2015-01-27
- Inventor: Myung Gil Kang , Changwoo Oh , Heedon Jeong , Chiwon Cho
- Applicant: Myung Gil Kang , Changwoo Oh , Heedon Jeong , Chiwon Cho
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0022837 20120306
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L21/8238 ; H01L29/66
Abstract:
A Field Effect Transistor (FET) structure may include a fin on a substrate having a first lattice constant and at least two different lattice constant layers on respective different axially oriented surfaces of the fin, wherein the at least two different lattice constant layers each comprise lattice constants that are different than the first lattice constant and each other.
Public/Granted literature
- US20130234204A1 FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS AND METHODS OF FABRICATING THE SAME Public/Granted day:2013-09-12
Information query
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