Invention Grant
- Patent Title: Self-aligned dielectric isolation for FinFET devices
- Patent Title (中): FinFET器件的自对准介质隔离
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Application No.: US13735315Application Date: 2013-01-07
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Publication No.: US08941156B2Publication Date: 2015-01-27
- Inventor: Marc Adam Bergendahl , Kangguo Cheng , David Vaclav Horak , Ali Khakifirooz , Shom Ponoth , Theodorus Eduardus Standaert , Chih-Chao Yang , Charles William Koburger, III , Xiuyu Cai , Ruilong Xie
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk KY Ugland House
- Assignee: International Business Machines Corporation,GlobalFoundries, Inc.
- Current Assignee: International Business Machines Corporation,GlobalFoundries, Inc.
- Current Assignee Address: US NY Armonk KY Ugland House
- Agent Yuanmin Cai
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
Embodiments of the present invention provide a method of forming semiconductor structure. The method includes forming a set of device features on top of a substrate; forming a first dielectric layer directly on top of the set of device features and on top of the substrate, thereby creating a height profile of the first dielectric layer measured from a top surface of the substrate, the height profile being associated with a pattern of an insulating structure that fully surrounds the set of device features; and forming a second dielectric layer in areas that are defined by the pattern to create the insulating structure. A structure formed by the method is also disclosed.
Public/Granted literature
- US20140191296A1 SELF-ALIGNED DIELECTRIC ISOLATION FOR FINFET DEVICES Public/Granted day:2014-07-10
Information query
IPC分类:
