A semiconductor device including an NMOS region and a PMOS region; the NMOS region having a gate structure including a first high-k gate dielectric, a first work function setting metal and a gate electrode fill material; the PMOS region having a gate structure comprising a second high-k gate dielectric, a second work function setting metal and a gate electrode fill material; wherein the first gate dielectric is different than the second gate dielectric and the first work function setting metal is different than the second work function setting metal. Also disclosed are methods for fabricating the semiconductor device which include a gate last process.