Invention Grant
- Patent Title: Electronic chip and method of fabricating the same
- Patent Title (中): 电子芯片及其制造方法
-
Application No.: US13938324Application Date: 2013-07-10
-
Publication No.: US08941231B2Publication Date: 2015-01-27
- Inventor: Young Rak Park , Sang Choon Ko , Byoung-Gue Min , Jong-Won Lim , Hokyun Ahn , Sung-Bum Bae , Jae Kyoung Mun , Eun Soo Nam
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2012-0147251 20121217
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L29/66 ; H01L23/522 ; H01L23/532 ; H01L23/66

Abstract:
Provided are an electronic chip and a method of fabricating the same. The semiconductor chip may include a substrate, an active device integrated on the substrate, a lower interlayered insulating layer covering the resulting structure provided with the active device, a passive device provided on the lower interlayered insulating layer, an upper interlayered insulating layer covering the resulting structure provided with the passive device, and a ground electrode provided on the upper interlayered insulating layer. The upper interlayered insulating layer may be formed of a material, whose dielectric constant may be higher than that of the lower interlayered insulating layer.
Public/Granted literature
- US20140167070A1 ELECTRONIC CHIP AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-06-19
Information query
IPC分类: