Invention Grant
- Patent Title: Semiconductor device and method of manufacturing thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13768125Application Date: 2013-02-15
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Publication No.: US08941243B2Publication Date: 2015-01-27
- Inventor: Woo-seok Shim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0061674 20120608
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498 ; H01L21/768 ; H01L23/528 ; H01L23/00

Abstract:
A semiconductor device includes a substrate, a plurality of signal lines, and at least one power line. The substrate includes an integrated circuit unit. The signal lines are disposed on the substrate and are configured to provide the integrated circuit unit with signals. The power line is disposed on the substrate and is configured to provide the integrated circuit unit with power supply on the substrate. The power line includes a stacked structure including a first power line and a second power line stacked on the first power line.
Public/Granted literature
- US20130328210A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2013-12-12
Information query
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