Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13448496Application Date: 2012-04-17
-
Publication No.: US08941958B2Publication Date: 2015-01-27
- Inventor: Hiroyuki Tomatsu
- Applicant: Hiroyuki Tomatsu
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson PC.
- Priority: JP2011-096607 20110422; JP2011-112691 20110519
- Main IPC: H02H3/22
- IPC: H02H3/22 ; H01L27/02 ; H01L27/06

Abstract:
To provide a protection circuit having a small area, redundancy, and small leak current. In the protection circuit, a plurality of nonlinear elements is provided so as to overlap with each other and so as to be electrically connected in series. At least one nonlinear element in the protection circuit is a diode-connected transistor including an oxide semiconductor in its channel formation region. The other nonlinear element is a diode-connected transistor including silicon in its channel formation region or a diode including silicon in its junction region.
Public/Granted literature
- US20120268849A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-10-25
Information query