Invention Grant
- Patent Title: Memory apparatus and methods
- Patent Title (中): 存储器和方法
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Application No.: US14136819Application Date: 2013-12-20
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Publication No.: US08942045B2Publication Date: 2015-01-27
- Inventor: Koji Sakui
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C16/24
- IPC: G11C16/24 ; G11C16/04 ; G11C16/10 ; G11C16/26

Abstract:
Embodiments of apparatus and methods having a memory device can include a line to exchange information with a string of memory cells and a transistor coupled between the string of memory cells and the line. Such a memory device can also include a module configured to couple a gate of the transistor to a node during a first time interval of a memory operation and decouple the gate from the node during a second time interval of the memory operation. Additional apparatus and methods are described.
Public/Granted literature
- US20140104959A1 MEMORY APPARATUS AND METHODS Public/Granted day:2014-04-17
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