Invention Grant
- Patent Title: Silicon oxide removal apparatus and facility for recycling inert gas for use in silicon single crystal manufacturing apparatus
- Patent Title (中): 氧化硅去除装置和用于回收用于硅单晶制造装置的惰性气体的设备
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Application No.: US13383298Application Date: 2010-05-27
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Publication No.: US08945293B2Publication Date: 2015-02-03
- Inventor: Takashi Higuchi , Tadahiko Horiuchi
- Applicant: Takashi Higuchi , Tadahiko Horiuchi
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2009-183091 20090806; JP2009-235008 20091009
- International Application: PCT/JP2010/003548 WO 20100527
- International Announcement: WO2011/016167 WO 20110210
- Main IPC: B01D47/00
- IPC: B01D47/00 ; C30B15/20 ; C30B15/00 ; C30B29/06 ; C30B35/00 ; F27B14/08 ; F27D17/00

Abstract:
A silicon oxide removal apparatus for removing silicon oxide contained in an inert gas discharged from a silicon single crystal manufacturing apparatus, including at least: a contact means for bringing the inert gas discharged from the silicon single crystal manufacturing apparatus into contact with a strongly alkaline solution; and a neutralizing means for neutralizing an alkaline material contained in the inert gas brought into contact with the strongly alkaline solution. As a result, there is provided a silicon oxide removal apparatus and a facility for recycling an inert gas for use in a silicon single crystal manufacturing apparatus that can more effectively remove the silicon oxide contained in the inert gas discharged from the silicon single crystal manufacturing apparatus at low cost and enable recycle of the inert gas in which the silicon oxide has been effectively removed.
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