Invention Grant
US08945302B2 Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer
有权
使用金属疏水 - 金属亲水性表面活性剂和金属润湿层的金属 - 非金属化合物的晶体生长方法
- Patent Title: Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer
- Patent Title (中): 使用金属疏水 - 金属亲水性表面活性剂和金属润湿层的金属 - 非金属化合物的晶体生长方法
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Application No.: US14002820Application Date: 2012-03-04
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Publication No.: US08945302B2Publication Date: 2015-02-03
- Inventor: Moshe Einav
- Applicant: Moshe Einav
- Applicant Address: IL Herzliya
- Assignee: Mosaic Crystals Ltd.
- Current Assignee: Mosaic Crystals Ltd.
- Current Assignee Address: IL Herzliya
- Agency: Brown Rudnick LLP
- International Application: PCT/IL2012/000103 WO 20120304
- International Announcement: WO2012/120497 WO 20120913
- Main IPC: C30B19/04
- IPC: C30B19/04 ; C30B19/00 ; C30B9/00 ; C30B23/00 ; C30B25/00 ; C30B29/40 ; C30B19/06 ; C30B19/10 ; C30B25/16 ; C30B7/00 ; C30B23/02 ; C30B25/02

Abstract:
Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.
Public/Granted literature
- US20130333613A1 METHOD FOR SURFACTANT CRYSTAL GROWTH OF A METAL-NONMETAL COMPOUND Public/Granted day:2013-12-19
Information query
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