Invention Grant
US08945304B2 Ultrahigh vacuum process for the deposition of nanotubes and nanowires
有权
用于沉积纳米管和纳米线的超高真空工艺
- Patent Title: Ultrahigh vacuum process for the deposition of nanotubes and nanowires
- Patent Title (中): 用于沉积纳米管和纳米线的超高真空工艺
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Application No.: US12228529Application Date: 2008-08-13
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Publication No.: US08945304B2Publication Date: 2015-02-03
- Inventor: Biswajit Das , Myung B. Lee
- Applicant: Biswajit Das , Myung B. Lee
- Applicant Address: US NV Las Vegas
- Assignee: The Board of Regents of the Nevada System of Higher Education on behalf of the University of Nevada, Las Vegas University of Nevada
- Current Assignee: The Board of Regents of the Nevada System of Higher Education on behalf of the University of Nevada, Las Vegas University of Nevada
- Current Assignee Address: US NV Las Vegas
- Agency: Mark A. Litman & Associates, P.A.
- Main IPC: C30B25/00
- IPC: C30B25/00 ; C30B23/00 ; C30B29/52 ; C30B29/60 ; C30B29/40

Abstract:
A system and method A method of growing an elongate nanoelement from a growth surface includes: a) cleaning a growth surface on a base element; b) providing an ultrahigh vacuum reaction environment over the cleaned growth surface; c) generating a reactive gas of an atomic material to be used in forming the nanoelement; d) projecting a stream of the reactive gas at the growth surface within the reactive environment while maintaining a vacuum of at most 1×10−4 Pascal; e) growing the elongate nanoelement from the growth surface within the environment while maintaining the pressure of step c); f) after a desired length of nanoelement is attained within the environment, stopping direction of reactive gas into the environment; and g) returning the environment to an ultrahigh vacuum condition.
Public/Granted literature
- US20090047427A1 Ultrahigh vacuum process for the deposition of nanotubes and nanowires Public/Granted day:2009-02-19
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