Invention Grant
- Patent Title: Vacuum exhaust method and a substrate processing apparatus therefor
- Patent Title (中): 真空排气法及其基板处理装置
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Application No.: US13690826Application Date: 2012-11-30
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Publication No.: US08945313B2Publication Date: 2015-02-03
- Inventor: Hidefumi Matsui , Tsuyoshi Moriya , Nobuyuki Nagayama
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Minato-ku
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-276028 20081027
- Main IPC: B08B5/04
- IPC: B08B5/04 ; B08B7/04 ; C23C16/44 ; B08B6/00 ; B08B7/00

Abstract:
A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member.
Public/Granted literature
- US20130092185A1 VACUUM EXHAUST METHOD AND A SUBSTRATE PROCESSING APPARATUS THEREFOR Public/Granted day:2013-04-18
Information query
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