Invention Grant
- Patent Title: Material test structure
- Patent Title (中): 材料试验结构
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Application No.: US13458048Application Date: 2012-04-27
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Publication No.: US08945403B2Publication Date: 2015-02-03
- Inventor: Fabio Pellizzer , Innocenzo Tortorelli , Christina Papagianni , Gianpaolo Spadini , Jong Won Lee
- Applicant: Fabio Pellizzer , Innocenzo Tortorelli , Christina Papagianni , Gianpaolo Spadini , Jong Won Lee
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01B13/00
- IPC: H01B13/00

Abstract:
Material test structures having cantilever portions and methods of forming the same are described herein. As an example, a method of forming a material test structure includes forming a number of electrode portions in a first dielectric material, forming a second dielectric material on the first dielectric material, wherein the second dielectric material includes a first cantilever portion and a second cantilever portion, and forming a test material on the number of electrode portions, the first dielectric material, and the second dielectric material.
Public/Granted literature
- US20130283936A1 MATERIAL TEST STRUCTURE Public/Granted day:2013-10-31
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