A substrate cleaning apparatus is capable of cleaning an entire periphery of a substrate end portion at a time by simple control without polishing the end portion and without generating plasma. The substrate cleaning apparatus has a mounting table 204 on which a wafer W is placed, a heating unit 210 for heating a wafer end portion, ultraviolet application unit 220 for applying ultraviolet to the wafer end portion, and a gas flow forming unit 230 for forming a gas flow on the surface of the wafer end portion. The heating unit, the ultraviolet application unit, and the gas flow forming unit are disposed near the wafer end portion so as to surround the wafer.