Invention Grant
- Patent Title: Laser processing method
- Patent Title (中): 激光加工方法
-
Application No.: US13389048Application Date: 2011-07-19
-
Publication No.: US08945416B2Publication Date: 2015-02-03
- Inventor: Hideki Shimoi , Keisuke Araki
- Applicant: Hideki Shimoi , Keisuke Araki
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2010-167410 20100726
- International Application: PCT/JP2011/066323 WO 20110719
- International Announcement: WO2012/014712 WO 20120202
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B23K26/38 ; B23K26/40 ; H01L21/306 ; H01L21/48 ; B23K26/00

Abstract:
A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.
Public/Granted literature
- US20120135606A1 LASER PROCESSING METHOD Public/Granted day:2012-05-31
Information query
IPC分类: