Invention Grant
- Patent Title: Storage element and memory device
- Patent Title (中): 存储元件和存储器件
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Application No.: US13310846Application Date: 2011-12-05
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Publication No.: US08945730B2Publication Date: 2015-02-03
- Inventor: Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
- Applicant: Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2010-276590 20101213
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L27/22 ; G01R33/09 ; H01L43/08
Abstract:
A storage element including: a storage layer; a magnetization fixed layer; and an insulating layer, wherein by injecting spin-polarized electrons in a laminating direction of a layered structure that includes the storage layer, the insulating layer, and the magnetization fixed layer, the orientation of magnetization of the storage layer changes and recording of information is performed on the storage layer, and an Fe film and a film that includes Ni are formed in order from an interface side that is in contact with the insulating layer, and a graded composition distribution of Ni and Fe is formed after heating on at least one of the storage layer and the magnetization fixed layer.
Public/Granted literature
- US20120148874A1 STORAGE ELEMENT AND MEMORY DEVICE Public/Granted day:2012-06-14
Information query
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