Invention Grant
- Patent Title: Storage element and terminal fabricating method
- Patent Title (中): 存储元件和端子制造方法
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Application No.: US13316226Application Date: 2011-12-09
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Publication No.: US08945760B2Publication Date: 2015-02-03
- Inventor: Syun Ito
- Applicant: Syun Ito
- Applicant Address: JP Kyoto-Shi, Kyoto
- Assignee: GS Yuasa International Ltd.
- Current Assignee: GS Yuasa International Ltd.
- Current Assignee Address: JP Kyoto-Shi, Kyoto
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-276298 20101210; JP2011-240127 20111101
- Main IPC: H01M2/30
- IPC: H01M2/30

Abstract:
A storage element includes: an external terminal having an exposed surface which is exposed to the outside from an envelope, a current collector which is contained inside of the envelope and is connected to the external terminal, and a power generating element which is contained inside of the envelope and is connected to the current collector. The external terminal includes: a flat portion exposed to the outside; and a shaft projecting from the flat portion to the inside of the envelope and being connected to the current collector.
Public/Granted literature
- US20120148908A1 STORAGE ELEMENT AND TERMINAL FABRICATING METHOD Public/Granted day:2012-06-14
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