Invention Grant
US08945800B2 Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program
有权
制作图案的方法,形成掩模组的方法,装置制造方法和计算机程序
- Patent Title: Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program
- Patent Title (中): 制作图案的方法,形成掩模组的方法,装置制造方法和计算机程序
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Application No.: US13965103Application Date: 2013-08-12
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Publication No.: US08945800B2Publication Date: 2015-02-03
- Inventor: Tsann-Bim Chiou , Mircea Dusa , Alek Chi-Heng Chen
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/68 ; G03F7/26 ; G06F17/50 ; G03F7/20

Abstract:
In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.
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