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US08945808B2 Self-topcoating resist for photolithography 有权
用于光刻的自表面涂层抗蚀剂

Self-topcoating resist for photolithography
Abstract:
Resist compositions that can be used in immersion lithography without the use of an additional topcoat are disclosed. The resist compositions comprise a photoresist polymer, at least one photoacid generator, a solvent; and a self-topcoating resist additive. A method of forming a patterned material layer on a substrate using the resist composition is also disclosed.
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