Invention Grant
US08945816B2 Method for forming resist pattern, semiconductor device and production method thereof
有权
形成抗蚀剂图案的方法，半导体器件及其制造方法
- Patent Title: Method for forming resist pattern, semiconductor device and production method thereof
- Patent Title (中): 形成抗蚀剂图案的方法，半导体器件及其制造方法
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Application No.: US13339761Application Date: 2011-12-29
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Publication No.: US08945816B2Publication Date: 2015-02-03
- Inventor: Miwa Kozawa , Koji Nozaki
- Applicant: Miwa Kozawa , Koji Nozaki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-222498 20060817
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/40 ; H01L21/027 ; H01L21/311
Abstract:
A method for producing a semiconductor device includes forming a resist pattern by coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the baking and the developing is carried out plural times.
Public/Granted literature
- US20120098103A1 METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF Public/Granted day:2012-04-26
Information query
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