Invention Grant
- Patent Title: Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same
- Patent Title (中): 抗蚀剂图案增厚材料，抗蚀剂图案形成方法，半导体器件及其制造方法
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Application No.: US13835393Application Date: 2013-03-15
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Publication No.: US08945822B2Publication Date: 2015-02-03
- Inventor: Koji Nozaki , Miwa Kozawa
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-260854 20060926; JP2007-189182 20070720
- Main IPC: G03F7/38
- IPC: G03F7/38 ; C08K5/17 ; G03F7/40 ; H01L21/027 ; H01L21/311 ; H01L27/105 ; H01L27/115 ; H01L21/308 ; H01L29/06 ; H01L21/033
Abstract:
The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened, e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
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