Invention Grant
- Patent Title: Method for fabricating variable resistance memory device
- Patent Title (中): 制造可变电阻存储器件的方法
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Application No.: US13595567Application Date: 2012-08-27
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Publication No.: US08945949B2Publication Date: 2015-02-03
- Inventor: Sang Min Hwang
- Applicant: Sang Min Hwang
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0145040 20111228
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/20

Abstract:
A method for fabricating a variable resistance memory device in accordance with an embodiment of the present invention includes: sequentially forming a first conductive layer and a variable resistance layer on a substrate; forming stacked structures in which first conductive lines and variable resistance lines are sequentially stacked by selectively etching the variable resistance layer and the first conductive layer; forming an insulating layer to fill a space between the stacked structures; forming a second conductive layer on the insulating layer and the stacked structures; and forming a second conductive line and a variable resistance pattern by etching the second conductive layer and the variable resistance line using mask patterns in a line type extending in a direction intersecting the stacked structures.
Public/Granted literature
- US20130171741A1 METHOD FOR FABRICATING VARIABLE RESISTANCE MEMORY DEVICE Public/Granted day:2013-07-04
Information query
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