Invention Grant
US08945949B2 Method for fabricating variable resistance memory device 有权
制造可变电阻存储器件的方法

  • Patent Title: Method for fabricating variable resistance memory device
  • Patent Title (中): 制造可变电阻存储器件的方法
  • Application No.: US13595567
    Application Date: 2012-08-27
  • Publication No.: US08945949B2
    Publication Date: 2015-02-03
  • Inventor: Sang Min Hwang
  • Applicant: Sang Min Hwang
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2011-0145040 20111228
  • Main IPC: H01L21/00
  • IPC: H01L21/00 H01L21/20
Method for fabricating variable resistance memory device
Abstract:
A method for fabricating a variable resistance memory device in accordance with an embodiment of the present invention includes: sequentially forming a first conductive layer and a variable resistance layer on a substrate; forming stacked structures in which first conductive lines and variable resistance lines are sequentially stacked by selectively etching the variable resistance layer and the first conductive layer; forming an insulating layer to fill a space between the stacked structures; forming a second conductive layer on the insulating layer and the stacked structures; and forming a second conductive line and a variable resistance pattern by etching the second conductive layer and the variable resistance line using mask patterns in a line type extending in a direction intersecting the stacked structures.
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