Invention Grant
- Patent Title: Fabrication of nitride nanoparticles
- Patent Title (中): 氮化纳米颗粒的制备
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Application No.: US13145385Application Date: 2010-01-26
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Publication No.: US08945964B2Publication Date: 2015-02-03
- Inventor: Peter Neil Taylor , Jonathan Heffernan
- Applicant: Peter Neil Taylor , Jonathan Heffernan
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: GB0901226.1 20090126
- International Application: PCT/JP2010/051315 WO 20100126
- International Announcement: WO2010/085001 WO 20100729
- Main IPC: C09K11/08
- IPC: C09K11/08 ; C30B7/06 ; B82Y30/00 ; C01B21/06 ; C09K11/02 ; C09K11/62 ; C30B29/38 ; C30B29/40 ; C30B29/60 ; C01B21/064 ; C01B21/068 ; C01B21/072

Abstract:
A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained.
Public/Granted literature
- US20120018774A1 FABRICATION OF NITRIDE NANOPARTICLES Public/Granted day:2012-01-26
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