Invention Grant
- Patent Title: Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer
- Patent Title (中): 使用中间成核层制造在金刚石衬底上具有氮化镓外延层的半导体器件的方法
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Application No.: US13608902Application Date: 2012-09-10
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Publication No.: US08945966B2Publication Date: 2015-02-03
- Inventor: Daniel Francis , Felix Ejeckam , John Wasserbauer , Dubravko Babic
- Applicant: Daniel Francis , Felix Ejeckam , John Wasserbauer , Dubravko Babic
- Applicant Address: US CA Santa Clara
- Assignee: Element Six Technologies US Corporation
- Current Assignee: Element Six Technologies US Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Bryan Cave LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/336 ; H01L21/04 ; H01L21/02 ; H01L23/373 ; C30B7/00
Abstract:
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
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