Invention Grant
US08945976B2 Method for making solar cell having crystalline silicon P—N homojunction and amorphous silicon heterojunctions for surface passivation
有权
制造具有晶体硅P-N同态结构的太阳能电池和用于表面钝化的非晶硅异质结的方法
- Patent Title: Method for making solar cell having crystalline silicon P—N homojunction and amorphous silicon heterojunctions for surface passivation
- Patent Title (中): 制造具有晶体硅P-N同态结构的太阳能电池和用于表面钝化的非晶硅异质结的方法
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Application No.: US13307602Application Date: 2011-11-30
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Publication No.: US08945976B2Publication Date: 2015-02-03
- Inventor: Daniel L. Meier , Ajeet Rohatgi
- Applicant: Daniel L. Meier , Ajeet Rohatgi
- Applicant Address: US GA Norcross
- Assignee: Suniva, Inc.
- Current Assignee: Suniva, Inc.
- Current Assignee Address: US GA Norcross
- Agency: Ballard Spahr LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L31/0747 ; H01L31/068 ; H01L31/20 ; H01L31/0745 ; H01L31/078
Abstract:
A thin silicon solar cell is described. An example solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer. A final layer of transparent conductive oxide is formed on both sides. Metal contacts are applied to the transparent conductive oxide.
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