Invention Grant
US08945988B2 Method for thinning, metalizing, and dicing a semiconductor wafer and, semiconductor device made using the method
有权
用于使半导体晶片薄化，金属化和切割的方法以及使用该方法制造的半导体器件
- Patent Title: Method for thinning, metalizing, and dicing a semiconductor wafer and, semiconductor device made using the method
- Patent Title (中): 用于使半导体晶片薄化，金属化和切割的方法以及使用该方法制造的半导体器件
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Application No.: US14018518Application Date: 2013-09-05
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Publication No.: US08945988B2Publication Date: 2015-02-03
- Inventor: Hiroyuki Numaguchi
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2012-198529 20120910
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L21/00 ; H01L21/30 ; H01L21/46 ; H01L21/78 ; H01L21/301 ; H01L21/02 ; H01L23/544
Abstract:
There is provided a method of fabricating a semiconductor device, method including: a) forming semiconductor elements in plural element regions surrounded by assumed dicing lines on a first principal surface of a semiconductor wafer; b) grinding the second principal surface in such a way that an outer peripheral portion of a second principal surface on the opposite side of the first principal surface of the semiconductor wafer becomes thicker than an inner peripheral portion of the second principal surface; c) forming a metal film, in such a way as to avoid sections corresponding to the dicing lines, on the second principal surface that has been ground in the grinding step; and d) cutting the semiconductor wafer from the second principal surface side along portions where the metal film is not formed on the dicing lines.
Public/Granted literature
- US20140070374A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2014-03-13
Information query
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