Integrated circuits and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit having a split-gate nonvolatile memory device includes forming a charge storage structure overlying a semiconductor substrate and having a first sidewall and a second sidewall and forming an interior cavity. The method forms a control gate in the interior cavity. Further, the method forms a first select gate overlying the semiconductor substrate and adjacent the first sidewall. A first memory cell is formed by the control gate and the first select gate. The method also forms a second select gate overlying the semiconductor substrate and adjacent the second sidewall. A second memory cell is formed by the control gate and the second select gate.