Invention Grant
US08946000B2 Method for forming an integrated circuit having a programmable fuse
有权
用于形成具有可编程熔丝的集成电路的方法
- Patent Title: Method for forming an integrated circuit having a programmable fuse
- Patent Title (中): 用于形成具有可编程熔丝的集成电路的方法
-
Application No.: US13774486Application Date: 2013-02-22
-
Publication No.: US08946000B2Publication Date: 2015-02-03
- Inventor: Douglas M. Reber , Mehul D. Shroff , Edward O. Travis
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Terrile, Cannatti, Chambers & Holland, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/768 ; H01L23/525
Abstract:
A back-end-of-line thin ion beam deposited fuse (204) is deposited without etching to connect first and second last metal interconnect structures (110, 120) formed with last metal layers (LM) in a planar multi-layer interconnect stack to programmably connect separate first and second circuit connected to the first and second last metal interconnect structures.
Public/Granted literature
- US20140239440A1 Thin Beam Deposited Fuse Public/Granted day:2014-08-28
Information query
IPC分类:
